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May 2008
N-Channel Power Trench MOSFET
FDB3502
75V, 14A, 47m ?
Features
Max r DS(on) = 47m ? at V GS = 10V, I D = 6A
100% UIL Tested
RoHS Compliant
?
tm
General Description
This N-Channel MOSFET is produced using Fairchild
Semiconductor‘s advanced Power Trench ? process that has
been especially tailored to minimize the on-state resistance and
yet maintain superior switching performance.
Application
Synchronous rectifier
D
D
G
S
TO-263AB
G
FDB Series
MOSFET Maximum Ratings T C = 25°C unless otherwise noted
S
Symbol
V DS
V GS
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous (Package limited)
T C = 25°C
Ratings
75
±20
14
Units
V
V
I D
-Continuous (Silicon limited)
-Continuous
T C = 25°C
T A = 25°C
(Note 1a)
22
6
A
-Pulsed
40
E AS
Single Pulse Avalanche Energy
(Note 3)
54
mJ
P D
Power Dissipation
Power Dissipation
T C = 25°C
T A = 25°C
(Note 1a)
41
3.1
W
T J , T STG
Operating and Storage Junction Temperature Range
-55 to +150
°C
Thermal Characteristics
R θ JC
R θ JA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
(Note 1a)
3
40
°C/W
Package Marking and Ordering Information
Device Marking
FDB3502
Device
FDB3502
Package
TO-263AB
Reel Size
330 mm
Tape Width
24 mm
Quantity
800 units
?2008 Fairchild Semiconductor Corporation
FDB3502 Rev.C2
1
www.fairchildsemi.com
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